Recently, Jiangsu Runyang New Energy Technology Co., Ltd. (hereinafter referred to as "Runyang") announced that its independently developed M10 silicon wafer full-area N-type cell has been certified by the authoritative third-party tester ISFH (Institute for Solar Energy Research Hamelin) in Germany, with a photoelectric conversion efficiency of 26.55%.

This efficiency level not only breaks Runyang Technology's existing record, but also surpasses the 26.4% full-area N-type TOPCon cell efficiency recorded by Professor Martin Green in "Solar Cell Efficiency Tables (Version 66), Progress in Photovoltaics: Research and Applications", becoming the highest full-area N-type cell efficiency in publicly available data.

The battery was manufactured by Runyang Technology Research Institute's pilot production line, using standard thickness M10 silicon wafers and a fully mass-producible process, and was independently tested and confirmed by ISFH in Germany.

This high-efficiency battery utilizes Runyang Technology's independently developed N-type TOPCon 3.0 technology. Through process optimization and the proprietary RunPass passivation process, Jo_rearpoly < 1 fA/cm² was achieved. The front side employs high sheet resistance diffusion combined with hydrogen passivation technology, resulting in Joe < 3 fA/cm², effectively reducing surface recombination losses and improving carrier lifetime. Simultaneously, Runyang Technology's R&D team independently developed a Powerloss online analysis system, which can quantitatively analyze the efficiency losses of each cell in real time, including silicon wafer bulk recombination, diffusion layer recombination, poly layer light absorption, and gate series resistance, providing precise quantitative data support for process optimization.